Band offset transitivity in AlGaAs/InGaP/InGaAsP heterostructures on a GaAs substrate
作者:
Yong‐Hoon Cho,
Byung‐Doo Choe,
H. Lim,
期刊:
Applied Physics Letters
(AIP Available online 1996)
卷期:
Volume 69,
issue 24
页码: 3740-3742
ISSN:0003-6951
年代: 1996
DOI:10.1063/1.117207
出版商: AIP
数据来源: AIP
摘要:
The conduction‐band offset &Dgr;Ecof Al0.3Ga0.7As/In0.1Ga0.9As0.8P0.2lattice matched to a GaAs substrate was measured by capacitance‐voltage analysis. To examine the transitivity of the band offset in the AlGaAs/InGaP/InGaAsP system, the band offsets of Al0.3Ga0.7As/In0.5Ga0.5P and In0.5Ga0.5P/In0.1Ga0.9As0.8P0.2were investigated. The value of &Dgr;Ecfor the Al0.3Ga0.7As/In0.1Ga0.9As0.8P0.2heterostructure, estimated by adding the measured &Dgr;Ecvalues in Al0.3Ga0.7As/In0.5Ga0.5P and in In0.5Ga0.5P/In0.1Ga0.9As0.8P0.2, agrees well with the value measured directly. We thus conclude that the transitivity rule holds well for the band offsets of an AlGaAs/InGaP/InGaAsP system lattice matched to a GaAs substrate. ©1996 American Institute of Physics.
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