首页   按字顺浏览 期刊浏览 卷期浏览 Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double h...
Vertical integration of an InGaAsP/InP heterojunction bipolar transistor and a double heterostructure laser

 

作者: T. R. Chen,   K. Utaka,   Y. H. Zhuang,   Y. Y. Liu,   A. Yariv,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 50, issue 14  

页码: 874-876

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98018

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A double heterostructure InGaAsP/InP mesa laser and a mass transport laser were integrated vertically with an InGaAsP/InP double heterojunction bipolar transistor, resulting in the first realization of laser operation in a vertical integration. Laser thresholds as low as 17 mA and an output laser power of over 30 mW were observed. A new type of bistable laser and electro‐optical switching were demonstrated.

 

点击下载:  PDF (311KB)



返 回