首页   按字顺浏览 期刊浏览 卷期浏览 Atmospheric scanning electron microscopy using silicon nitride thin film windows
Atmospheric scanning electron microscopy using silicon nitride thin film windows

 

作者: E. D. Green,   G. S. Kino,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1991）
卷期: Volume 9, issue 3  

页码: 1557-1558

 

ISSN:1071-1023

 

年代: 1991

 

DOI:10.1116/1.585422

 

出版商: American Vacuum Society

 

关键词: SILICON NITRIDES;THIN FILMS;SCANNING ELECTRON MICROSCOPY;WINDOW MATERIALS;MEDIUM PRESSURE;ELECTRON BEAMS

 

数据来源: AIP

 

摘要:

We report preliminary results of scanning electron microscopy (SEM) imaging with submicron resolution at atmospheric pressure using silicon nitride windows to separate the atmosphere from the electron optics. The edge response of the current system is 0.25 μm through 75 nm windows at 15 μm air path length. We discuss the merits of windowed atmospheric SEM systems.

 

点击下载:  PDF (232KB)



返 回