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(InAs)3(GaAs)1superlattice channel field‐effect transistor grown by molecular beam epitaxy

 

作者: Naoki Nishiyama,   Hiroshi Yano,   Shigeru Nakajima,   Hideki Hayashi,  

 

期刊: Applied Physics Letters  （AIP Available online 1989）
卷期: Volume 55, issue 9  

页码: 894-895

 

ISSN:0003-6951

 

年代: 1989

 

DOI:10.1063/1.101618

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A metal‐insulator‐semiconductor field‐effect transistor (MISFET) using the InAs‐GaAs superlattice as a channel layer has been successfully demonstrated for the first time. Device structure was grown by molecular beam epitaxy. The MISFET with 1.0 &mgr;m gate length exhibits a maximum external dc transconductance of 212 mS/mm atVds=3.0 V andVg=−1.5 V. This value is high among 1.0 &mgr;m gate length devices.

 

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