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Thermally activated dissipation and critical fieldHc2inc‐oriented high‐TcBi‐Pb‐Sr‐Ca‐Cu‐O thin film

 

作者: Y. H. Wang,   C. G. Cui,   Y. Z. Zhang,   S. L. Li,   J. Li,   L. Li,  

 

期刊: Journal of Applied Physics  (AIP Available online 1991)
卷期: Volume 69, issue 8  

页码: 4379-4383

 

ISSN:0021-8979

 

年代: 1991

 

DOI:10.1063/1.348362

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A set of resistivity‐temperature (R‐T) curves measured under various applied fields in a high‐TcBi‐Pb‐Sr‐Ca‐Cu‐O thin film which has a zero‐resistance temperatureTc0of 110 K is reported. The remarkable broadening of the transition width is discussed under the flux‐creep model, considering the very short coherence length of this oxide superconductor. The resistivity is thermally activated, which is consistent with the Arrhenius law with a magnetic field and orientation‐dependent activation energyU0(H,&THgr;). TheU0(H,&THgr;) has a very high value of 381.6 meV under a field of 0.1 T parallel to thecaxis. The upper critical fieldHc2determined from theseR‐Tcurves shows high values and the effect of flux creep to theHc2(0) is examined by the irreversible behavior with the ‘‘giant’’ flux‐creep model.

 

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