Thermally activated dissipation and critical fieldHc2inc‐oriented high‐TcBi‐Pb‐Sr‐Ca‐Cu‐O thin film
作者:
Y. H. Wang,
C. G. Cui,
Y. Z. Zhang,
S. L. Li,
J. Li,
L. Li,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 8
页码: 4379-4383
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348362
出版商: AIP
数据来源: AIP
摘要:
A set of resistivity‐temperature (R‐T) curves measured under various applied fields in a high‐TcBi‐Pb‐Sr‐Ca‐Cu‐O thin film which has a zero‐resistance temperatureTc0of 110 K is reported. The remarkable broadening of the transition width is discussed under the flux‐creep model, considering the very short coherence length of this oxide superconductor. The resistivity is thermally activated, which is consistent with the Arrhenius law with a magnetic field and orientation‐dependent activation energyU0(H,&THgr;). TheU0(H,&THgr;) has a very high value of 381.6 meV under a field of 0.1 T parallel to thecaxis. The upper critical fieldHc2determined from theseR‐Tcurves shows high values and the effect of flux creep to theHc2(0) is examined by the irreversible behavior with the ‘‘giant’’ flux‐creep model.
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