Optical gain for wurtzite GaN with anisotropic strain incplane
作者:
K. Domen,
K. Horino,
A. Kuramata,
T. Tanahashi,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 8
页码: 987-989
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118457
出版商: AIP
数据来源: AIP
摘要:
We calculated band structures of (11¯00)-oriented GaN with various strains. We found that introducing anisotropic strain in thecplane separates heavy- and light-hole bands. We also found that a tensile strain in the (11¯00) plane makes the light-hole band topmost. These two effects result in a reduction in the density of states at the valence-band edge. In this way we can significantly reduce the transparent carrier density to generate gain. ©1997 American Institute of Physics.
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