Effect of the proximity of anex situpatterned interface on the quality of two‐dimensional electron gases at GaAs/AlGaAs heterojunctions
作者:
M. P. Grimshaw,
D. A. Ritchie,
J. H. Burroughs,
G. A. C. Jones,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
(AIP Available online 1994)
卷期:
Volume 12,
issue 2
页码: 1290-1292
ISSN:1071-1023
年代: 1994
DOI:10.1116/1.587025
出版商: American Vacuum Society
关键词: HETEROJUNCTIONS;TERNARY COMPOUNDS;ALUMINIUM ARSENIDES;GALLIUM ARSENIDES;SILICON ADDITIONS;INTERFACE STRUCTURE;MOLECULAR BEAM EPITAXY;ELECTRON GAS;CARRIER DENSITY;CARRIER MOBILITY;PHOTOCONDUCTIVITY;DEGRADATION;GaAa:Si;(Al,Ga)Aa
数据来源: AIP
摘要:
High‐quality two‐dimensional electron gases (2DEGs) were regrown ontoexsitupatterned substrates and the effect of the distance between the 2DEG and the contaminated regrowth interface was investigated. At a separation of 220 nm mobilities of 7.1×105cm2 V−1 s−1in the dark and 1.3×106cm2 V−1 s−1after illumination with a red light‐emitting diode (LED) were measured with corresponding carrier concentrations of 2.4×1011and 4.3×1011cm−2. The quality of this 2DEG was equivalent to that attained in conventionally grown 2DEGs at the time, indicating that the 2DEG was not affected by presence of the regrowth interface in this case. For smaller separations a degradation in the 2DEG quality was observed. Thus, at a separation of only 60 nm, a mobility of 4.1×105cm2 V−1 s−1at a carrier concentration of 4.2×1011cm−2was measured after illumination. The use of an independently contactedn+layer in the patterned substrate as a backgate was also demonstrated.
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