Preservation of atomically clean silicon surfaces in air by contact bonding
作者:
Franc¸ois Grey,
Karin Hermansson,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 71,
issue 23
页码: 3400-3402
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.120348
出版商: AIP
数据来源: AIP
摘要:
When two hydrogen-passivated silicon surfaces are placed in contact under cleanroom conditions, a weak bond is formed. Cleaving this bond under ultrahigh vacuum (UHV) conditions, and observing the surfaces with low energy electron diffraction and scanning tunneling microscopy, we find that the ordered atomic structure of the surfaces is protected from oxidation, even after the bonded samples have been in air for weeks. Further, we show that silicon surfaces that have been cleaned and hydrogen-passivated in UHV can be contacted in UHV in a similarly hermetic fashion, protecting the surface reconstruction from oxidation in air. Contact bonding opens the way to novel applications of reconstructed semiconductor surfaces, by preserving their atomic structure intact outside of a UHV chamber. ©1997 American Institute of Physics.
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