Polarization dependence of intraband absorption in self-organized quantum dots
作者:
S. J. Chua,
S. J. Xu,
X. H. Zhang,
X. C. Wang,
T. Mei,
W. J. Fan,
C. H. Wang,
J. Jiang,
X. G. Xie,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 73,
issue 14
页码: 1997-1999
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.122347
出版商: AIP
数据来源: AIP
摘要:
Photoluminescence and intraband absorption were investigated inn-doped self-organized InAs andIn0.35Ga0.65Asquantum dots grown on a GaAs substrate. Intraband absorption of the dots is strongly polarized along the growth axis in the mid infrared spectral range. The absorption is maximum at around 120 meV for InAs dots and at 130 meV forIn0.35Ga0.65Asdots. The experimental results on InAs dots are in agreement with published theoretical calculations. ©1998 American Institute of Physics.
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