In heteroepitaxial films grown by chemical vapor deposition, the uniaxial anisotropy required for the formation of bubble domains may be stress‐induced by lattice constant mismatch between film and substrate. The signs of the magnetostriction constants of gallium‐substituted erbium iron garnet permit stress‐induced uniaxial anisotropy to be caused by either tensile or compressive stress. The lattice parameters of desired film and substrate compositions are estimated and chemical vapor deposition conditions are given. Gallium‐substituted erbium iron garnet is a useful bubble domain material. A typical film of composition Er3Ga0. 7Fe4.3O12has the following properties: thickness 4.4 &mgr;m, magnetization 132 gauss, characteristic length 1.5 &mgr;m, temperature coefficient of bubble diameter at 300°K 3.3 percent/K°, Neel temperature 435°K. Better quality films have been realized in tension than in compression.