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In/Pt ohmic contacts to GaAs

 

作者: Dean C. Marvin,   Neil A. Ives,   Martin S. Leung,  

 

期刊: Journal of Applied Physics  （AIP Available online 1985）
卷期: Volume 58, issue 7  

页码: 2659-2661

 

ISSN:0021-8979

 

年代: 1985

 

DOI:10.1063/1.335899

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Graded heterojunction InGaAs ohmic contacts to GaAs have been prepared which show improved electrical and mechanical properties. The improvements result from the use of a thin Pt layer between the In layer and the substrate which controls the reaction of the In and the GaAs. Evidence is also offered that the InAs heterojunction regions are epitaxial.

 

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