The properties of single silicon field emission microtriodes have been examined. Gate and collector currents were measured in a vacuum of 2×10−8Torr, and current–voltage, current–time, Fowler–Nordheim (I/V2versus 1/V), and triode characteristics were determined. The data showed that the electron emission followed Fowler–Nordheim behavior. Single emitters had turn‐on gate‐to‐cathode voltages (V) above 25 V (typically 50–90 V) and reproducible emission currents were measured in the range 5 pA–1 μA. Temporal fluctuations in emission current of 10%, 16%, and 40% were found for emission currents of 0.35, 50 nA, and 0.5 μA, respectively. The triode characteristics showed anIg/Icratio of 0.25% and higher. Transconductances were found to be 3×10−8Ω−1/tip. Electrostatic discharge and other device failure mechanisms have been observed and are described.