NiSi2(111) and NiSi2(100) layers with good crystalline quality have been formed by ion‐beam synthesis. An unusual Ni atom distribution showing two completely separated layers during a single implantation step has been observed by Rutherford backscattering spectrometry (RBS) and transmission electron microscopy (TEM). The orientation, strain, and stiffness of the NiSi2layers have been studied by RBS/channeling, x‐ray diffraction, and TEM. The results show that the continuous NiSi2layers have type‐A orientation with a parallel elastic strain larger than the theoretical value of 0.46% for pseudomorphic growth. The perpendicular strain of the NiSi2(111) layers is apparently smaller than that of NiSi2(100) layers, indicating a higher stiffness in the ⟨111⟩ direction. ©1995 American Institute of Physics.