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Epitaxial growth quality optimization by supercomputer

 

作者: Shaun Clarke,   Dimitri D. Vvedensky,  

 

期刊: Applied Physics Letters  （AIP Available online 1987）
卷期: Volume 51, issue 5  

页码: 340-342

 

ISSN:0003-6951

 

年代: 1987

 

DOI:10.1063/1.98434

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Supercomputer simulations of molecular beam epitaxial growth are applied to modeling processing profiles. Illustration is provided by investigating the relative advantages of high incident beam flux growth, interrupted periodically to allow the growth front to relax, versus continual growth at a relatively low deposition rate.

 

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