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A simple method for growing V3Si single crystals

 

作者: T. Callaghan,   J. Schwanebeck,   L. Toth,   M. Dayan,   A. M. Goldman,  

 

期刊: Journal of Applied Physics  （AIP Available online 1978）
卷期: Volume 49, issue 4  

页码: 2523-2525

 

ISSN:0021-8979

 

年代: 1978

 

DOI:10.1063/1.325104

 

出版商: AIP

 

数据来源: AIP

 

摘要:

V3Si crystals have been grown by electron‐beam melting using a procedure simpler than previous methods. The resultant crystals are of high quality with a low oxygen content and with a superconducting‐transition temperature of 16.9 K, a resistivity ratio of 40, and a martensitic transformation at 21.7 K.

 

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