An experimental investigation has been carried out to confirm that contact noise of two crossed semiconductor bars with native oxide films in between can be understood as a volume 1/fnoise. Noise and contact resistance have been measured as functions of the forceFon the crossed bars.Fvaries between 6 N and 6×10−5N. From a simple model, an equation is derived which relates the 1/fnoise intensityCto the contact resistanceR. The calculations are in agreement with the experimentalC‐Rplots. Two extreme situations are possible: constriction dominated and film dominated. Which situation actually occurs can be seen in theC‐Rplot as well as in theR‐Fplot.