Rutherford backscattering and channeling techniques have been used to study temperature-dependent segregation of Cu, Au, and Pd at Si–SiO2interfaces during high dose 15 keV O+bombardment of Si. Results illustrate a strong tendency for metals to be retained in an amorphous Si layer adjacent to the continuous SiO2layer formed by O+bombardment of Si. The magnitude of segregation depends on the bombardment temperature. We explain our temperature-dependent data in terms of a thermodynamic model whereby the segregation is driven by a large solubility difference between metals in amorphous Si and SiO2. Segregation is enhanced when the metal diffusivity in amorphous Si is high. ©1997 American Institute of Physics.