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Technique for junction depth measurement of silicon solar cells

 

作者: D. Biswas,   J. B. Roy,  

 

期刊: Review of Scientific Instruments  （AIP Available online 1983）
卷期: Volume 54, issue 11  

页码: 1580-1582

 

ISSN:0034-6748

 

年代: 1983

 

DOI:10.1063/1.1137270

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A new technique for junction depth measurements of silicon solar cells is described. The technique essentially consists of repeated anodization and etching of the surface layer followed by electrical measurements. The advantages of the technique are discussed and illustrative results are presented.

 

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