A new ultrafine line pattern inversion and transfer technique based on local low temperature plasma oxidation and reactive ion etching of suitable metal films, such as aluminum, is presented. The patterned surface oxidized metal film may serve as a surface passivated interconnect or gate structure for integrated semiconductor devices, or be used as an etch mark for underlying layers. As an application a process for patterning self‐aligned two layer gate lines composed of molybdenum silicide and polycrystalline silicon is given. Linewidths as small as 1500 Å have been achieved.