Data are presented showing that boron carryover into theilayer is responsible for the commonly observed difference in open circuit voltage betweenp‐i‐nandn‐i‐pamorphous silicon solar cells. It is proposed that the lower voltage samples are being limited by surface recombination at thep/iinterface and that boron carryover reduces this recombination current. TheVocis then able to rise to the point where it is limited by the bulk recombination current.