Spatial localization of Be in &dgr;‐doped GaAs within few lattice constants (<20 A˚) is achieved at low growth temperatures for concentrationsN2DBe<1014cm−2as indicated by capacitance‐voltage profiles and secondary ion mass spectroscopy. At elevated growth temperatures and at higher Be concentrations, significant spreading of the dopants occurs and is explained by (i) Fermi‐level pinning‐induced segregation, (ii) repulsive Coulomb interaction of dopants, and (iii) diffusion. The highest Be concentration achieved at low growth temperatures exceeds 2×1020cm−3and is limited by repulsive dopant interaction. It is shown that the repulsive Coulomb interaction results in a correlated, nonrandom dopant distribution. The diffusion coefficient of Be in GaAs is determined and is found to be much lower than previously reported.