The annealing properties of both high and low substrate temperature (Ts) a‐Ge samples have been examined. The behavior of high Tssamples is seen to agree with those previously reported. The behavior for low Tssamples is shown to have a wide range of behavior which may or may not be a function of the vacuum during annealing. Depth profiles of oxygen and carbon from Auger spectroscopy have been obtained and results show that high oxygen levels exist in low Tssamples after annealing.In the low temperature regime we show that for our data the variable range tunneling mechanism explains the temperature, annealing and thickness dependence of the conductivity quite well. Some inconsistencies which remain between the data and theory are noted.