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Generating ∼90 nanometer features using near-field contact-mode photolithography with an elastomeric phase mask

 

作者: John A. Rogers,   Kateri E. Paul,   Rebecca J. Jackman,   George M. Whitesides,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  （AIP Available online 1998）
卷期: Volume 16, issue 1  

页码: 59-68

 

ISSN:1071-1023

 

年代: 1998

 

DOI:10.1116/1.589836

 

出版商: American Vacuum Society

 

数据来源: AIP

 

摘要:

This article describes a near-field photolithographic method that uses an elastomeric phase mask in conformal contact with photoresist. The method is capable of generating∼90 nmlines in commercially available photoresist, using broadband, incoherent light with wavelengths between 330 and 460 nm. Transfer of these patterns into silicon dioxide and gold demonstrates the integrity of the patterned resist.

 

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