Ga0.47In0.53As/InP superlattices grown by chemical beam epitaxy: Absorption, photoluminescence excitation, and photocurrent spectroscopies
作者:
W. T. Tsang,
E. F. Schubert,
S. N. G. Chu,
K. Tai,
R. Sauer,
期刊:
Applied Physics Letters
(AIP Available online 1987)
卷期:
Volume 50,
issue 9
页码: 540-542
ISSN:0003-6951
年代: 1987
DOI:10.1063/1.98153
出版商: AIP
数据来源: AIP
摘要:
Superlattices of Ga0.47In0.53As/InP grown by chemical beam epitaxy (CBE) were studied in detail by transmission electron microscopy, absorption, photoluminescence (PL), photoluminescence excitation (PLE), and photocurrent (PC) spectroscopies. Results from all these characterization techniques independently confirmed the superior qualities of the CBE‐grown Ga0.47In0.53As/InP superlattices over previously reported results. Photoluminescence linewidths were close to those obtained from CBE‐grown single quantum wells. All of the observed excitonic absorption peaks in absorption, PLE, and PC spectra were well resolved and clearly assigned including the forbiddenE13htransition for the first time. In fact, these excitonic structures were still observed in the PC spectra at temperatures as high as 102 °C.
点击下载:
PDF
(388KB)
返 回