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Raman study of order and disorder in SiGe ultrathin superlattices

 

作者: J. Menéndez,   A. Pinczuk,   J. Bevk,   J. P. Mannaerts,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1988）
卷期: Volume 6, issue 4  

页码: 1306-1309

 

ISSN:0734-211X

 

年代: 1988

 

DOI:10.1116/1.584254

 

出版商: American Vacuum Society

 

关键词: SUPERLATTICES;FABRICATION;RAMAN SPECTRA;RAMAN SPECTROSCOPY;STRAINS;INTERFACE STRUCTURE;SILICON;GERMANIUM;ORDER−DISORDER MODEL;(Ge,Si)

 

数据来源: AIP

 

摘要:

We present a Raman scattering study of ultrathin SiGe superlattices. The spectra show evidence for the formation of superlattice structures with disordered interfaces. We explain the Raman peak energies in terms of strain and confinement effects and present a simple model for the Raman spectrum, from which we obtain semiquantitative information on the degree of superlattice ordering.

 

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