The interaction between iron and defects produced by electron irradiation in iron‐doped silicon has been observed by using deep‐level transient spectroscopy. A new electron trap level due to the iron‐vacancy‐oxygen complex [Fe+(V⋅O)] was detected atEc−0.36 eV. The role of theAcenter (V⋅O) in the formation of the complex was confirmed by the observation that during low‐temperature annealing (<150 °C) the increases in the concentration of the [Fe+(V⋅O)] complex was accompanied by an equal and opposite change in the concentration of theAcenter. Besides the interaction with theAcenter, iron was found to influence the annealing behavior of the divacancy andEcenter.