Observation of internal structure of a positive photoresist image using cross‐sectional exposure method
作者:
Yasunori Uetani,
Makoto Hanabata,
Akihiro Furuta,
期刊:
Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena
(AIP Available online 1989)
卷期:
Volume 7,
issue 3
页码: 569-571
ISSN:0734-211X
年代: 1989
DOI:10.1116/1.584787
出版商: American Vacuum Society
关键词: AZIDES;QUINONES;RESINS;PHOTORESISTS;OPTICAL PROPERTIES;PHOTOCHEMICAL REACTIONS;IMAGE FORMING;LITHOGRAPHY
数据来源: AIP
摘要:
The internal structure of a novolak/quinonediazide type positive photoresist image was observed using a cross‐sectional exposure method. On the surface of a photoresist image, a photochemically inert layer was detected which does not return to diazo and phenolic compounds with acid treatment. This shows that this layer does not consist of the azoxy compounds. Fourier transform infrared spectrum indicates that this layer includes azocoupling reaction products. It was also found that the formation of the photochemically inert layer and the dissolution of the layer takes place simultaneously at the development front and a resist image is formed during the competition between these two reactions.
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