High‐dose carbon‐ion‐implanted Si samples have been analyzed by infrared spectroscopy, Raman scattering, and x‐ray photoelectron spectroscopy (XPS) correlated with transmission electron microscopy. Samples were implanted at room temperature and 500 °C with doses between 1017and 1018C+/cm2. Some of the samples were implanted at room temperature with the surface covered by a capping oxide layer. Implanting at room temperature leads to the formation of a surface carbon‐rich amorphous layer, in addition to the buried implanted layer. The dependence of this layer on the capping oxide suggests this layer to be determined by carbon migration toward the surface, rather than surface contamination. Implanting at 500 °C, no carbon‐rich surface layer is observed and the SiC buried layer is formed by crystalline &bgr;‐SiC precipitates aligned with the Si matrix. The concentration of SiC in this region as measured by XPS is higher than for the room‐temperature implantation. ©1995 American Institute of Physics.