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Time‐resolved‐spectrum studies of GaN light emitting diodes

 

作者: F. S. Choa,   J. Y. Fan,   P.‐L. Liu,   J. Sipior,   G. Rao,   G. M. Carter,   Y. J. Chen,  

 

期刊: Applied Physics Letters  （AIP Available online 1996）
卷期: Volume 69, issue 24  

页码: 3668-3670

 

ISSN:0003-6951

 

年代: 1996

 

DOI:10.1063/1.117183

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Time‐resolved‐emission spectra of InGaN and GaN light emitting diodes with different device structure are studied. Result shows that the UV generation from bulk materials and blue and green emissions from single quantum well devices are band edge recombination. ©1996 American Institute of Physics.

 

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