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Two‐layer resist fabrication by new portable conformable maskingi‐line lithography

 

作者: M. Endo,   M. Sasago,   Y. Hirai,   A. Ueno,   N. Nomura,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1989）
卷期: Volume 7, issue 1  

页码: 55-58

 

ISSN:0734-211X

 

年代: 1989

 

DOI:10.1116/1.584695

 

出版商: American Vacuum Society

 

关键词: LITHOGRAPHY;PHOTORESISTS;FABRICATION;ULTRAVIOLET RADIATION;MASKING;VLSI;RESOLUTION;resist

 

数据来源: AIP

 

摘要:

A new technique for submicron optical lithography is reported. Water‐soluble contrast enhancing material fori‐line exposure prevented the undercut profile of negative photoresist and attained high‐aspect‐ratio rectangular patterns. New portable conformable maskingi‐line lithography using the water‐soluble contrast enhancing material could successfully fabricate a two‐layer resist composed of negative photoresist RU‐1100N as a top layer and positive deep ultraviolet resist poly(dimethylglutarimide) as a bottom layer.

 

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