A method of making an ohmic contact to a semiconductor that does not inject minority carriers at high current densities has been found. This surmounts difficulties and limitations of previously reported experiments. Utilizing this technique, the high field current‐voltage characteristic ofp‐type germanium was measured at several temperatures from room temperature to liquid helium temperatures, a wider range than previously reported. From these data, one can compute the drift velocity (and drift mobility) as a function of electric field and also estimate the amount of heating that will occur when a square pulse of current is passed through ap‐type germanium sample immersed in liquid helium.