Be+/P+, Be+/Ar+, and Be+/N+coimplantations into InP:Fe
作者:
Mulpuri V. Rao,
Ravi K. Nadella,
期刊:
Journal of Applied Physics
(AIP Available online 1990)
卷期:
Volume 67,
issue 4
页码: 1761-1766
ISSN:0021-8979
年代: 1990
DOI:10.1063/1.345601
出版商: AIP
数据来源: AIP
摘要:
Single‐ and multiple‐energy Be+/P+, Be+/Ar+, and Be+/N+coimplantations were performed into semi‐insulating InP:Fe. Significantly higher Be dopant activations were obtained for Be+/P+and Be+/Ar+coimplantations compared to Be+implantation. Sharp hole‐concentration depth profiles were obtained for Be+/P+and Be+/Ar+coimplantations in contrast to the deep diffusion fronts for Be+implantation. A high degree of crystalline lattice damage in coimplanted material is believed to be responsible for the improved electrical characteristics of the material. A poor Be dopant electrical activation was observed for Be+/N+coimplantation.
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