The nucleation and growth of germanium on (11¯02) sapphire deposited by molecular beam epitaxy
作者:
D. J. Godbey,
M. E. Twigg,
期刊:
Journal of Applied Physics
(AIP Available online 1991)
卷期:
Volume 69,
issue 8
页码: 4216-4221
ISSN:0021-8979
年代: 1991
DOI:10.1063/1.348392
出版商: AIP
数据来源: AIP
摘要:
Single‐crystal germanium on (11¯02) sapphire films are grown after a substrate preanneal of 1400 °C and at growth temperatures above 700 °C. At a growth temperature of 800 °C, the nucleation site density was ∼1011cm−2. For thin germanium films, the isolated islands were singly oriented, with single‐crystal films obtained for thicker grown films. A 400 °C growth temperature on sapphire was insufficiently high to get epitaxial growth and produced polycrystallites. Growth at 400 °C on an 800 °C grown germanium template did result in epitaxy. However, a high fraction of the twinned orientation was produced, resulting in a bicrystalline film.
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