DOPING OF SILICON BY ION IMPLANTATION
作者:
Tadatsugu Itoh,
Taroh Inada,
Kiyoshi Kanekawa,
期刊:
Applied Physics Letters
(AIP Available online 1968)
卷期:
Volume 12,
issue 8
页码: 244-246
ISSN:0003-6951
年代: 1968
DOI:10.1063/1.1651975
出版商: AIP
数据来源: AIP
摘要:
Radiation damages created in silicon single crystals bombarded with 10‐keV aluminum ions were examined by means of electron diffraction method. A deep penetration of aluminum ion in silicon was observed, extending to 0.58 &mgr;. This penetration was depressed by removing the bombarded surface layer about 800 Å in thickness before annealing. From these results, we interpret the deep penetration as a radiation enhanced diffusion effect.
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