Fabrication of small laterally patterned multiple quantum wells
作者:
A. Scherer,
H. G. Craighead,
期刊:
Applied Physics Letters
(AIP Available online 1986)
卷期:
Volume 49,
issue 19
页码: 1284-1286
ISSN:0003-6951
年代: 1986
DOI:10.1063/1.97387
出版商: AIP
数据来源: AIP
摘要:
A technique of high voltage electron beam lithography and BCl3/Ar reactive ion etching for laterally patterning GaAs/Al0.3Ga0.7As multiple quantum wells is described. The resulting structures were analyzed using scanning electron microscopy and a novel reflection electron microscopy technique, and their geometries are shown. Narrow columns 40 nm in diameter etched 230 nm through the quantum wells were reproducibly fabricated.
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