Self-organized CdSe quantum dots onto cleaved GaAs (110) originating from Stranski–Krastanow growth mode
作者:
Hyun-Chul Ko,
Doo-Cheol Park,
Yoichi Kawakami,
Shizuo Fujita,
Shigeo Fujita,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 24
页码: 3278-3280
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.118427
出版商: AIP
数据来源: AIP
摘要:
Self-organized CdSe/ZnSe quantum dots (QDs) have been fabricated on GaAs (110) crystal surfaces, which were obtained by cleaving GaAs (100) wafers in ultrahigh vacuum. CdSe showed a conventional Stranski–Krastanow growth mode on the ZnSe (110) lower cladding layer, whose surfaces are atomically flat. The wetting layers, which are compose of quantum wells with well widths of 1, 2, and 3 monomolecular layers, showed sharp photoluminescence (PL). The fabricated CdSe QDs showed intense green PL spectra, whose peak is located at 2.192 eV, with a linewidth of 0.24 eV. The state filling effect in CdSe QDs was also observed by employing excitation power dependence of the PL intensity. ©1997 American Institute of Physics.
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