On the feasibility of using ultraviolet/ozone grown oxide as an atomic interdiffusion barrier in Ge/GaAs heterojunctions
作者:
K. M. Lui,
K. P. Chik,
R. W. M. Kwok,
W. H. Choy,
I. H. Wilson,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 21
页码: 2701-2703
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121104
出版商: AIP
数据来源: AIP
摘要:
A 10 Å ultraviolet/ozone grown oxide was used as an atomic diffusion barrier in a Ge/GaAs heterostructure. Good thermal stability of the oxide layer has been demonstrated by the appearance of dendritic crystallization [K. M. Lui, K. P. Chik, and J. B. Xu, J. Appl. Phys.81, 7757 (1997)], induced byin situthermal pulse annealing, of the Ge overlayer. In this work, an abrupt heterointerface was revealed by aligned Rutherford backscattering spectroscopy after annealing and compared with a control with no barrier at the interface where considerable diffusion had taken place. Current–voltage measurement indicated good rectifying properties of the oxide barrier heterojunction. ©1998 American Institute of Physics.
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