Down-scaling limitations in CMOS devices: Is there a role for the ferroelectrics?
作者:
Sima Dimitrijev,
期刊:
Integrated Ferroelectrics
(Taylor Available online 1995)
卷期:
Volume 9,
issue 1-3
页码: 151-157
ISSN:1058-4587
年代: 1995
DOI:10.1080/10584589508012919
出版商: Taylor & Francis Group
数据来源: Taylor
摘要:
This paper reviews down-scaling limitations in CMOS devices, with a special emphasis on the possible application of ferroelectric materials. Ultimate limit in reduction of the thickness of gate oxide is found as the most important limitation. The possibility of replacing or enhancing the gate oxide by a ferroelectric material is critically considered in view of the desired properties of the silicon - to - gate insulator interface.
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