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Mid-infraredIn1−xAlxSb/InSbheterostructure diode lasers

 

作者: T. Ashley,   C. T. Elliott,   R. Jefferies,   A. D. Johnson,   G. J. Pryce,   A. M. White,   M. Carroll,  

 

期刊: Applied Physics Letters  （AIP Available online 1997）
卷期: Volume 70, issue 8  

页码: 931-933

 

ISSN:0003-6951

 

年代: 1997

 

DOI:10.1063/1.118444

 

出版商: AIP

 

数据来源: AIP

 

摘要:

Stimulated emission at 5.1 &mgr;m was demonstrated from a broad areaIn1−xAlxSb/InSbheterostructure diode laser grown by molecular beam epitaxy. For a 5 &mgr;s pulse and a 500 Hz repetition rate the threshold current density was 1480A cm−2at 77 K and the maximum operating temperature was 90 K at a current density of 2680A cm−2. Maximum peak power output was estimated to be 28 mW per facet at 77 K and 4500A cm−2.

 

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