Aspect-ratio-dependent charging in high-density plasmas
作者:
Gyeong S. Hwang,
Konstantinos P. Giapis,
期刊:
Journal of Applied Physics
(AIP Available online 1997)
卷期:
Volume 82,
issue 2
页码: 566-571
ISSN:0021-8979
年代: 1997
DOI:10.1063/1.365616
出版商: AIP
数据来源: AIP
摘要:
The effect of aspect ratio (depth/width) on charge buildup in trenches during plasma etching of polysilicon-on-insulator structures is studied by Monte Carlo simulations. Increased electron shadowing at larger aspect ratios reduces the electron current to the trench bottom. To reach a new charging steady state, the bottom potential must increase, significantly perturbing the local ion dynamics in the trench: the deflected ions bombard the sidewall with larger energies resulting in severe notching. The results capture reported experimental trends and reveal why the increase in aspect ratio that follows the reduction in critical device dimensions will cause more problems unless the geometry is scaled to maintain a constant aspect ratio. ©1997 American Institute of Physics.
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