The effects of a static electric field on the dispersive free‐carrier magneto‐optic effects in semiconductors are discussed for the conditions of low degeneracy, deformation‐potential acoustic scattering, a simple parabolic band, and (1) moderately high magnetic fields, for whichsH/cE≈1 but &ohgr;c&tgr;0<1, (2) strong, but nonquantizing, fields (&ohgr;c&tgr;0>1), and (3) the extreme quantum limit where the carriers are confined to a single Landau level. In the last case, only the situation where the static electric and magnetic fields are perpendicular is considered. In the first case, only small electric‐field‐induced effects occur. In the second case, only the low‐frequency Voigt effect is changed much by the electric field; it is strongly anisotropic and relatively independent of magnetic field strength. In the quantum limit, an electric field should produce a considerable increase in an already large low‐frequency Voigt effect. Effects of higher‐order terms in relaxation time and distribution function in the quantum limit are also discussed.