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Simple model for the slope change ofC‐Vcurves of irradiated MOS capacitors

 

作者: K. F. Galloway,  

 

期刊: Journal of Applied Physics  （AIP Available online 1974）
卷期: Volume 45, issue 2  

页码: 964-965

 

ISSN:0021-8979

 

年代: 1974

 

DOI:10.1063/1.1663352

 

出版商: AIP

 

数据来源: AIP

 

摘要:

A simple model based on the concept of ionic clustering at the oxide‐semiconductor interface of an MOS device can qualitatively account for the observed slope change in the capacitance versus voltage characteristic of irradiated MOS capacitors.

 

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