Improvement of hydrogenated amorphous silicon germanium alloys using low power disilane–germane discharges without hydrogen dilution
作者:
Akihisa Matsuda,
Gautam Ganguly,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 9
页码: 1274-1276
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.114395
出版商: AIP
数据来源: AIP
摘要:
We suggest that the role of hydrogen dilution in the improvement of the quality of hydrogenated amorphous silicon germanium alloys is to alter the relative contribution of the short and long lifetime precursors to film growth which are deleterious and beneficient, respectively. In order to circumvent the preferential depletion of germane when mixed with silane, we have used low power disilane–germane discharges and thereby obtained films with an optical gap <1.5 eV having similar Urbach tail width and defect absorption, with and without hydrogen dilution. ©1995 American Institute of Physics.
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