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Surface silicon oxynitride films obtained by implanting mixtures of oxygen and nitrogen ions into silicon

 

作者: W. Streb,   R. Hezel,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics Processing and Phenomena  （AIP Available online 1984）
卷期: Volume 2, issue 4  

页码: 626-629

 

ISSN:0734-211X

 

年代: 1984

 

DOI:10.1116/1.582852

 

出版商: American Vacuum Society

 

关键词: THIN FILMS;SILICON NITRIDES;CHEMICAL COMPOSITION;ION IMPLANTATION;NITRIDATION;OXIDATION;SILICON;KEV RANGE 01−10;SPUTTERING;ELECTRON COLLISIONS;HARDNESS;AUGER ELECTRON SPECTROSCOPY;ARGON IONS;OXYNITRATES;CRYSTAL GROWTH;DOPING PROFILES;THIN FILM GROWTH

 

数据来源: AIP

 

摘要:

It was demonstrated that very thin silicon oxynitride films with concentrations covering the whole range between SiO2and Si3N4can be obtained by simultaneous high dose implantation of low energy oxygen and nitrogen ions into silicon. For ion energies of 5 keV homogeneous films about 5 nm in thickness resulted. These room‐temperature‐formed silicon oxynitride films were characterized by a combination of Auger electron spectroscopy (AES) and argon ion sputtering. The electron irradiation hardness was studied as a function of film composition.

 

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