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Measurements of thermal transport in low stress silicon nitride films

 

作者: W. Holmes,   J. M. Gildemeister,   P. L. Richards,   V. Kotsubo,  

 

期刊: Applied Physics Letters  (AIP Available online 1998)
卷期: Volume 72, issue 18  

页码: 2250-2252

 

ISSN:0003-6951

 

年代: 1998

 

DOI:10.1063/1.121269

 

出版商: AIP

 

数据来源: AIP

 

摘要:

We have measured the thermal conductance,G,of≈1&mgr;m thick low stress silicon nitride membranes over the temperature range,0.06<T<6K, as a function of surface condition. ForT>4K,Gis independent of surface condition indicating that the thermal transport is determined by bulk scattering. ForT<4K, scattering from membrane surfaces becomes significant. Membranes which have submicron sized Ag particles glued to the surface or are micromachined into narrow strips have aGthat is reduced by a factor as large as 5 compared with that of clean, solid membranes with the same ratio of cross section to length. ©1998 American Institute of Physics.

 

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