Measurements of thermal transport in low stress silicon nitride films
作者:
W. Holmes,
J. M. Gildemeister,
P. L. Richards,
V. Kotsubo,
期刊:
Applied Physics Letters
(AIP Available online 1998)
卷期:
Volume 72,
issue 18
页码: 2250-2252
ISSN:0003-6951
年代: 1998
DOI:10.1063/1.121269
出版商: AIP
数据来源: AIP
摘要:
We have measured the thermal conductance,G,of≈1&mgr;m thick low stress silicon nitride membranes over the temperature range,0.06<T<6K, as a function of surface condition. ForT>4K,Gis independent of surface condition indicating that the thermal transport is determined by bulk scattering. ForT<4K, scattering from membrane surfaces becomes significant. Membranes which have submicron sized Ag particles glued to the surface or are micromachined into narrow strips have aGthat is reduced by a factor as large as 5 compared with that of clean, solid membranes with the same ratio of cross section to length. ©1998 American Institute of Physics.
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