Visible luminescence from semiconductor quantum dots in large ensembles
作者:
R. Leon,
S. Fafard,
D. Leonard,
J. L. Merz,
P. M. Petroff,
期刊:
Applied Physics Letters
(AIP Available online 1995)
卷期:
Volume 67,
issue 4
页码: 521-523
ISSN:0003-6951
年代: 1995
DOI:10.1063/1.115175
出版商: AIP
数据来源: AIP
摘要:
Visible luminescence has been obtained from ensembles of defect‐free, InxAl(1−x)As islands of ultrasmall dimensions embedded in AlyGa(1−y)As cladding layers. These structures were grown by molecular beam epitaxy and studied with low‐temperature photoluminescence (PL) and transmission electron microscopy. Visible luminescence is produced using various compositions of InxAl(1−x)As/AlyGa(1−y)As. Quantum dot size distributions, planar densities, dot heights, and wetting layer thicknesses are presented and correlated with the PL spectra. ©1995 American Institute of Physics.
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