Comparison of high field electron transport in GaN and GaAs
作者:
B. E. Foutz,
L. F. Eastman,
U. V. Bhapkar,
M. S. Shur,
期刊:
Applied Physics Letters
(AIP Available online 1997)
卷期:
Volume 70,
issue 21
页码: 2849-2851
ISSN:0003-6951
年代: 1997
DOI:10.1063/1.119021
出版商: AIP
数据来源: AIP
摘要:
An ensemble Monte Carlo simulation is used to compare high field electron transport in bulk GaN and GaAs. In particular, velocity overshoot and electron transit times are examined. In GaN, we find the steady state velocity of the electrons is the most important factor determining transit time over distances longer than 0.2 &mgr;m. Over shorter distances velocity overshoot effects in GaN at high fields are comparable to those in GaAs. We estimate the minimum transit time across a 1 &mgr;m GaN sample to be about 3.0 ps. Similar calculations for GaAs yield 5.4 ps. ©1997 American Institute of Physics.
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