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Ag2Te/As2S3, a top‐surface, high‐contrast negative‐tone resist for deep ultraviolet submicron lithography

 

作者: S. A. Dumford,   J. M. Lavine,  

 

期刊: Journal of Vacuum Science&Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena  (AIP Available online 1994)
卷期: Volume 12, issue 1  

页码: 44-47

 

ISSN:1071-1023

 

年代: 1994

 

DOI:10.1116/1.587099

 

出版商: American Vacuum Society

 

关键词: LITHOGRAPHY;NEAR ULTRAVIOLET RADIATION;SILVER TELLURIDES;ARSENIC SULFIDES;SPATIAL RESOLUTION;PHOTORESISTS;SENSITIVITY;LAYERS;BINARY COMPOUNDS;USES;Ag2Te;As2S3;resists

 

数据来源: AIP

 

摘要:

The sensitivity of the Ag2Te/As2S3system has been measured as a top‐surface imaging, negative‐tone resist between 632.8 and 193 nm. The sensitivity atg‐line (435.8 nm) andi‐line (365 nm) is of the order of 5 and 0.5 J/cm2, respectively, and is much too low to take advantage of the significant advantages of this resist. These advantages are high contrast (∼10), an edge effect which compensates for the reduction of optical intensity at line edges and latent image formation in a layer whose thickness is significantly less than the depth‐of‐focus of high resolution stepper optical systems. Measurements at 248 and 193 nm show significantly higher sensitivity of 350 and 80 mJ/cm2, respectively, suggesting that this system may possess practical potential at these wavelengths. Exposures on a GCA XLS‐7500 stepper with 0.42 NA at 365 nm have yielded 0.35 μm linewidths.  

 

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