The driving force of ⟨100⟩ dark-line defect (DLD) climbing growth based on vacancy unsaturation is discussed. InInxGa1−xAs/GaAsstrained structures, it is found that compressive strain can reduce the osmotic (climb) force and can suppress the climb of DLDs in ⟨100⟩ direction. The percentage of indium inInxGa1−xAs/GaAsstrained heterostructures for the suppression of ⟨100⟩ DLD propagation is calculated under different material growth temperatures and doping levels. For ann-type doping level higher than 5×1016 cm−3, an indium percentage less than approximately 9&percent; inInxGa1−xAs/GaAsheterostructures is sufficient to stop the ⟨100⟩ DLDs growth and agrees well with the experimental observation. These results are useful for the design and fabrication of high reliability strained heterostructure devices. ©1997 American Institute of Physics.