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Photoluminescence characteristics of AlGaN‐GaN‐AlGaN quantum wells

 

作者: M. A. Khan,   R. A. Skogman,   J. M. Van Hove,   S. Krishnankutty,   R. M. Kolbas,  

 

期刊: Applied Physics Letters  （AIP Available online 1990）
卷期: Volume 56, issue 13  

页码: 1257-1259

 

ISSN:0003-6951

 

年代: 1990

 

DOI:10.1063/1.102530

 

出版商: AIP

 

数据来源: AIP

 

摘要:

AlxGa1−xN‐GaN quantum wells were grown on basal plane sapphire by low‐pressure metalorganic vapor deposition. The photoluminescence spectra of samples of different well thicknesses andxvalues were measured. The experimental data were compared with the calculated solutions of the finite square quantum well and the bound states involved in the optical transition were identified.

 

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